High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor

High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor

Abstract The deposition of high‐quality dielectric films on graphene surfaces is crucial in fabricating high‐performance graphene‐based electronics. In this study, the first application of UV‐assisted atomic layer deposition (UV‐ALD) to graphene surfaces and the fabrication of graphene field‐effect...

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Bibliographic Details
Main Authors: Geonwoo Park, Dohyun Go, Sungchan Jo, Tae Hoon Lee, Jeong Woo Shin, Jihwan An
Format: Article
Language:English
Published: Wiley-VCH 2023-07-01
Series:Advanced Electronic Materials
Subjects:
dielectric films
graphene field effect transistors
surface functionalization
UV‐assisted atomic layer deposition
Online Access:https://doi.org/10.1002/aelm.202300074

Internet

https://doi.org/10.1002/aelm.202300074

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