High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor
Abstract The deposition of high‐quality dielectric films on graphene surfaces is crucial in fabricating high‐performance graphene‐based electronics. In this study, the first application of UV‐assisted atomic layer deposition (UV‐ALD) to graphene surfaces and the fabrication of graphene field‐effect...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-07-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202300074 |
| _version_ | 1797672188876161024 |
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| author | Geonwoo Park Dohyun Go Sungchan Jo Tae Hoon Lee Jeong Woo Shin Jihwan An |
| author_facet | Geonwoo Park Dohyun Go Sungchan Jo Tae Hoon Lee Jeong Woo Shin Jihwan An |
| author_sort | Geonwoo Park |
| collection | DOAJ |
| description | Abstract The deposition of high‐quality dielectric films on graphene surfaces is crucial in fabricating high‐performance graphene‐based electronics. In this study, the first application of UV‐assisted atomic layer deposition (UV‐ALD) to graphene surfaces and the fabrication of graphene field‐effect transistors (GFETs) with UV‐ALD Al2O3 dielectric thin films is demonstrated. Optimal UV irradiation (5 s per cycle) during the ALD process results in denser and smoother Al2O3 dielectric films deposited on the graphene surface with the intimate graphene‐dielectric interface, while excessive UV irradiation in turn prohibits the film nucleation. As a result, the GFETs with a high‐quality dielectric layer deposited by UV‐ALD show improved performance with a Dirac voltage close to 0 V and hole mobility of 1221 cm2 V−1 s−1, i.e., > 200% increase compared to those with thermal ALD. This study demonstrates that UV‐ALD is an effective and simple option to realize a high‐quality interface between 2D materials and ultra‐thin dielectric films. |
| first_indexed | 2024-03-11T21:26:25Z |
| format | Article |
| id | doaj.art-f3f3d1b4f41844da95f2fa9a4707e057 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T21:26:25Z |
| publishDate | 2023-07-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-f3f3d1b4f41844da95f2fa9a4707e0572023-09-28T04:42:52ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-07-0197n/an/a10.1002/aelm.202300074High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect TransistorGeonwoo Park0Dohyun Go1Sungchan Jo2Tae Hoon Lee3Jeong Woo Shin4Jihwan An5Department of Manufacturing Systems and Design Engineering Seoul National University of Science and Technology (SeoulTech) Seoul 01811 South KoreaDepartment of Nano‐bio Engineering Seoul National University of Science and Technology Seoul 01811 South KoreaDepartment of Electrical Engineering Kwangwoon University Seoul 01897 South KoreaDepartment of Electrical Engineering Kwangwoon University Seoul 01897 South KoreaEnergy & Environment Research Institute Seoul National University of Science and Technology (SeoulTech) Seoul 01811 South KoreaDepartment of Manufacturing Systems and Design Engineering Seoul National University of Science and Technology (SeoulTech) Seoul 01811 South KoreaAbstract The deposition of high‐quality dielectric films on graphene surfaces is crucial in fabricating high‐performance graphene‐based electronics. In this study, the first application of UV‐assisted atomic layer deposition (UV‐ALD) to graphene surfaces and the fabrication of graphene field‐effect transistors (GFETs) with UV‐ALD Al2O3 dielectric thin films is demonstrated. Optimal UV irradiation (5 s per cycle) during the ALD process results in denser and smoother Al2O3 dielectric films deposited on the graphene surface with the intimate graphene‐dielectric interface, while excessive UV irradiation in turn prohibits the film nucleation. As a result, the GFETs with a high‐quality dielectric layer deposited by UV‐ALD show improved performance with a Dirac voltage close to 0 V and hole mobility of 1221 cm2 V−1 s−1, i.e., > 200% increase compared to those with thermal ALD. This study demonstrates that UV‐ALD is an effective and simple option to realize a high‐quality interface between 2D materials and ultra‐thin dielectric films.https://doi.org/10.1002/aelm.202300074dielectric filmsgraphene field effect transistorssurface functionalizationUV‐assisted atomic layer deposition |
| spellingShingle | Geonwoo Park Dohyun Go Sungchan Jo Tae Hoon Lee Jeong Woo Shin Jihwan An High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor Advanced Electronic Materials dielectric films graphene field effect transistors surface functionalization UV‐assisted atomic layer deposition |
| title | High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor |
| title_full | High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor |
| title_fullStr | High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor |
| title_full_unstemmed | High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor |
| title_short | High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor |
| title_sort | high performance graphene dielectric interface by uv assisted atomic layer deposition for graphene field effect transistor |
| topic | dielectric films graphene field effect transistors surface functionalization UV‐assisted atomic layer deposition |
| url | https://doi.org/10.1002/aelm.202300074 |
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