Characterization of GaN HEMTs' Aging Precursors and Activation Energy Under a Wide Range of Thermal Cycling Tests
In this article, 650-V/7.5-A-rated enhancement-mode gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with integrated gate drivers are characterized under thousands of accelerated thermal cycling (ATC) at different junction temperature stresses. This research helps in devel...
Main Authors: | , , |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2023-01-01
|
Series: | IEEE Open Journal of the Industrial Electronics Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10101820/ |