Characterization of GaN HEMTs' Aging Precursors and Activation Energy Under a Wide Range of Thermal Cycling Tests
In this article, 650-V/7.5-A-rated enhancement-mode gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with integrated gate drivers are characterized under thousands of accelerated thermal cycling (ATC) at different junction temperature stresses. This research helps in devel...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Open Journal of the Industrial Electronics Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10101820/ |