Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates

Abstract Vertical GaN‐on‐Si devices are promising for the next‐generation high‐voltage power electronics with low cost and high efficiency. However, their applications are impeded by the limited thickness of crack‐free GaN layers and high threading dislocation density (TDD) in the layer. Buffer laye...

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Bibliographic Details
Main Authors: Zhenghao Chen, Xuelin Yang, Xuan Liu, Jianfei Shen, Zidong Cai, Hongcai Yang, Xingyu Fu, Maojun Wang, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen
Format: Article
Language:English
Published: Wiley-VCH 2023-07-01
Series:Advanced Electronic Materials
Subjects:
AlGaN buffers
dislocation density
GaN‐on‐Si
stress relaxation
terrace width
Online Access:https://doi.org/10.1002/aelm.202300148

Internet

https://doi.org/10.1002/aelm.202300148

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