Origin of Topological Hall‐Like Feature in Epitaxial SrRuO3 Thin Films

Origin of Topological Hall‐Like Feature in Epitaxial SrRuO3 Thin Films

Abstract The discovery of topological Hall effect (THE) has important implications for next‐generation high‐density nonvolatile memories, energy‐efficient nanoelectronics, and spintronic devices. Both real‐space topological spin configurations and two anomalous Hall effects (AHE) with opposite polar...

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Bibliographic Details
Main Authors: Pinku Roy, Adra Carr, Tao Zhou, Binod Paudel, Xuejing Wang, Di Chen, Kyeong Tae Kang, Anastasios Pateras, Zachary Corey, Shizeng Lin, Jian‐Xin Zhu, Martin V. Holt, Jinkyoung Yoo, Vivien Zapf, Hao Zeng, Filip Ronning, Quanxi Jia, Aiping Chen
Format: Article
Language:English
Published: Wiley-VCH 2023-06-01
Series:Advanced Electronic Materials
Subjects:
anomalous hall effect
epitaxial
SrRuO 3
thin films
topological hall effect
Online Access:https://doi.org/10.1002/aelm.202300020

Internet

https://doi.org/10.1002/aelm.202300020

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