Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD

Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD

A series of AlGaN/GaN high-electron-mobility transistor (HEMT) structures, with an AlN thin buffer, GaN thick layer and Al<sub>0.25</sub>Ga<sub>0.75</sub>N layer (13–104 nm thick), is prepared by metal–organic chemical vapor deposition and investigated via multiple techniques...

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Bibliographic Details
Main Authors: Yanlian Yang, Yao Liu, Yaoze Li, Manika Tun Nafisa, Zhe Chuan Feng, Lianshan Wang, Jeffrey Yiin, Lingyu Wan, Benjamin Klein, Ian Ferguson, Wenhong Sun
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Nanomaterials
Subjects:
AlGaN/GaN
high-electron-mobility transistor (HEMT)
metal–organic chemical vapor deposition
spectroscopic ellipsometry
high-resolution X-ray diffraction
photoluminescence
Online Access:https://www.mdpi.com/2079-4991/15/3/165

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https://www.mdpi.com/2079-4991/15/3/165

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