Strategic Design and Mechanistic Understanding of Vacancy‐Filling Heusler Thermoelectric Semiconductors

Strategic Design and Mechanistic Understanding of Vacancy‐Filling Heusler Thermoelectric Semiconductors

Abstract Doping narrow‐gap semiconductors is a well‐established approach for designing efficient thermoelectric materials. Semiconducting half‐Heusler (HH) and full‐Heusler (FH) compounds have garnered significant interest within the thermoelectric field, yet the number of exceptional candidates rem...

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Bibliographic Details
Main Authors: Weimin Hu, Song Ye, Qizhu Li, Binru Zhao, Masato Hagihala, Zirui Dong, Yubo Zhang, Jiye Zhang, Shuki Torri, Jie Ma, Binghui Ge, Jun Luo
Format: Article
Language:English
Published: Wiley 2024-10-01
Series:Advanced Science
Subjects:
half‐Heusler
semiconductor
Slater‐Pauling rule
thermoelectric materials
vacancy‐filling
Online Access:https://doi.org/10.1002/advs.202407578

Internet

https://doi.org/10.1002/advs.202407578

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