An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs
This paper presents a frequency dependent reliability study of commercially available GaN HEMTs. Both circuit and device-level experiments were performed to better understand the device-level cause of degradation. It was determined through step-frequency analysis performed in a boost converter that...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9146610/ |