An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs
This paper presents a frequency dependent reliability study of commercially available GaN HEMTs. Both circuit and device-level experiments were performed to better understand the device-level cause of degradation. It was determined through step-frequency analysis performed in a boost converter that...
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9146610/ |
| _version_ | 1818379540822491136 |
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| author | Roshan L. Kini Shankar Dhakal Sadab Mahmud Andrew J. Sellers Michael R. Hontz Cheikh A. Tine Raghav Khanna |
| author_facet | Roshan L. Kini Shankar Dhakal Sadab Mahmud Andrew J. Sellers Michael R. Hontz Cheikh A. Tine Raghav Khanna |
| author_sort | Roshan L. Kini |
| collection | DOAJ |
| description | This paper presents a frequency dependent reliability study of commercially available GaN HEMTs. Both circuit and device-level experiments were performed to better understand the device-level cause of degradation. It was determined through step-frequency analysis performed in a boost converter that there is a frequency-dependent device degradation for positive gate stress. The point of degradation and its primary effect on the converter before the circuit ultimately failed have been analyzed with converter efficiency, gate current, and gate voltage overshoot. The findings of this experiment clearly show a decline in efficiency and voltage overshoot and increment in gate current, which are linked to device degradation. Furthermore, the recovery behavior of degraded devices has been investigated. However, after initial degradation, devices did not show any signs of recovery over twenty-four-hour recovery periods. The causal origin of these phenomena associated with the gate structure of the device was established by gate step-stress testing as well as an examination and analysis of the possible conduction mechanisms through the gate structure. |
| first_indexed | 2024-12-14T02:04:25Z |
| format | Article |
| id | doaj.art-f4478f59f946440da236511f63710c30 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-14T02:04:25Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
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| series | IEEE Access |
| spelling | doaj.art-f4478f59f946440da236511f63710c302022-12-21T23:20:56ZengIEEEIEEE Access2169-35362020-01-01813731213732110.1109/ACCESS.2020.30114539146610An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTsRoshan L. Kini0https://orcid.org/0000-0002-9347-2714Shankar Dhakal1Sadab Mahmud2https://orcid.org/0000-0001-8502-4770Andrew J. Sellers3Michael R. Hontz4https://orcid.org/0000-0001-5903-7666Cheikh A. Tine5Raghav Khanna6https://orcid.org/0000-0001-9654-1626The University of Toledo, Toledo, OH, USAThe University of Toledo, Toledo, OH, USAThe University of Toledo, Toledo, OH, USAThe University of Toledo, Toledo, OH, USAThe University of Toledo, Toledo, OH, USAThe University of Toledo, Toledo, OH, USAThe University of Toledo, Toledo, OH, USAThis paper presents a frequency dependent reliability study of commercially available GaN HEMTs. Both circuit and device-level experiments were performed to better understand the device-level cause of degradation. It was determined through step-frequency analysis performed in a boost converter that there is a frequency-dependent device degradation for positive gate stress. The point of degradation and its primary effect on the converter before the circuit ultimately failed have been analyzed with converter efficiency, gate current, and gate voltage overshoot. The findings of this experiment clearly show a decline in efficiency and voltage overshoot and increment in gate current, which are linked to device degradation. Furthermore, the recovery behavior of degraded devices has been investigated. However, after initial degradation, devices did not show any signs of recovery over twenty-four-hour recovery periods. The causal origin of these phenomena associated with the gate structure of the device was established by gate step-stress testing as well as an examination and analysis of the possible conduction mechanisms through the gate structure.https://ieeexplore.ieee.org/document/9146610/Frequency dependentgate-stressGaNreliabilityvoltage overshoot |
| spellingShingle | Roshan L. Kini Shankar Dhakal Sadab Mahmud Andrew J. Sellers Michael R. Hontz Cheikh A. Tine Raghav Khanna An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs IEEE Access Frequency dependent gate-stress GaN reliability voltage overshoot |
| title | An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs |
| title_full | An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs |
| title_fullStr | An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs |
| title_full_unstemmed | An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs |
| title_short | An Investigation of Frequency Dependent Reliability and Failure Mechanism of pGaN Gated GaN HEMTs |
| title_sort | investigation of frequency dependent reliability and failure mechanism of pgan gated gan hemts |
| topic | Frequency dependent gate-stress GaN reliability voltage overshoot |
| url | https://ieeexplore.ieee.org/document/9146610/ |
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