A Multilevel Magnetic Synapse Based on Voltage‐Tuneable Magnetism by Nitrogen Ion Migration

A Multilevel Magnetic Synapse Based on Voltage‐Tuneable Magnetism by Nitrogen Ion Migration

Abstract Advanced synaptic devices with simultaneous memory and processor capabilities are envisaged as core elements of neuromorphic computing (NC) for low‐power artificial intelligence. So far, most synaptic devices are based on resistive memories, where the device resistance is tuned with applied...

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Bibliographic Details
Main Authors: P. Monalisha, Zheng Ma, Eva Pellicer, Enric Menéndez, Jordi Sort
Format: Article
Language:English
Published: Wiley-VCH 2023-08-01
Series:Advanced Electronic Materials
Subjects:
magneto‐ionics
neuromorphic computing
synaptic devices
transition‐metal nitride
voltage control of magnetism
Online Access:https://doi.org/10.1002/aelm.202300249

Internet

https://doi.org/10.1002/aelm.202300249

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