Synthesis of AlOxNy thin films using a two-step PE-ALD process

Synthesis of AlOxNy thin films using a two-step PE-ALD process

Homogeneous AlOxNy thin films with a controlled nitrogen composition, up to 7.1%, were grown on GaN substrate using plasma-enhanced atomic layer deposition. This was achieved through repeated cycles consisting of AlN thin layers deposition and subsequent in situ O2 plasma oxidation under optimized c...

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Detalles Bibliográficos
Main Authors: Mohammed Zeghouane, Pedro Fernandes Paes Pinto Rocha, Sarah Boubenia, Franck Bassani, Gauthier Lefevre, Sebastien Labau, Laura Vauche, Eugénie Martinez, Marc Veillerot, Bassem Salem
Formato: Artigo
Idioma:English
Publicado: AIP Publishing LLC 2023-08-01
Series:AIP Advances
Acceso en liña:http://dx.doi.org/10.1063/5.0154468

Internet

http://dx.doi.org/10.1063/5.0154468

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