Synthesis of AlOxNy thin films using a two-step PE-ALD process
Homogeneous AlOxNy thin films with a controlled nitrogen composition, up to 7.1%, were grown on GaN substrate using plasma-enhanced atomic layer deposition. This was achieved through repeated cycles consisting of AlN thin layers deposition and subsequent in situ O2 plasma oxidation under optimized c...
| Κύριοι συγγραφείς: | , , , , , , , , , |
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| Μορφή: | Άρθρο |
| Γλώσσα: | English |
| Έκδοση: |
AIP Publishing LLC
2023-08-01
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| Σειρά: | AIP Advances |
| Διαθέσιμο Online: | http://dx.doi.org/10.1063/5.0154468 |