Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method

Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method

A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper. A noise decomposition scheme is used to pinpoint the noise source. The long tail of the random noise (RN) distrib...

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Bibliographic Details
Main Authors: Calvin Yi-Ping Chao, Honyih Tu, Thomas Meng-Hsiu Wu, Kuo-Yu Chou, Shang-Fu Yeh, Chin Yin, Chih-Lin Lee
Format: Article
Language:English
Published: MDPI AG 2017-11-01
Series:Sensors
Subjects:
CMOS image sensor (CIS)
random telegraph noise (RTN)
correlated double sampling (CDS)
RTN emission and capture time constant
backside-illuminated technology (BSI)
pinned photodiode (PPD)
Gumbel distribution
Online Access:https://www.mdpi.com/1424-8220/17/12/2704

Internet

https://www.mdpi.com/1424-8220/17/12/2704

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