Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars

Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars

Abstract The size‐dependent strain relaxation in InAs quantum dots on the top face of GaAs(111)A nanopillars is studied experimentally by scanning transmission electron microscopy (STEM) and theoretically using molecular static simulations. In the experiment, a dislocation‐free, coherent state is ob...

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Bibliographic Details
Main Authors: Thomas Riedl, Vinay S. Kunnathully, Alexander Trapp, Timo Langer, Dirk Reuter, Jörg K. N. Lindner
Format: Article
Language:English
Published: Wiley-VCH 2022-04-01
Series:Advanced Materials Interfaces
Subjects:
III–V semiconductors
heteroepitaxy
misfit dislocations
strain
nanostructures
Online Access:https://doi.org/10.1002/admi.202102159

Internet

https://doi.org/10.1002/admi.202102159

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