High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications

High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications

This study describes high-power and high-efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) for future sub-terahertz wireless communications. A low-thermal-budget selective-area growth (SAG) process was developed to obtain low contact resistance with low trap states. Transm...

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Bibliographic Details
Main Authors: Yusuke Kumazaki, Shiro Ozaki, Yasuhiro Nakasha, Naoya Okamoto, Atsushi Yamada, Toshihiro Ohki
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Applied Physics Express
Subjects:
GaN
HEMT
6G
sub-terahertz
Online Access:https://doi.org/10.35848/1882-0786/ad68c2

Internet

https://doi.org/10.35848/1882-0786/ad68c2

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