Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

GaN-based planar Gunn diodes are promising terahertz sources for monolithic microwave and terahertz integrated circuits (MMICs and MTICs, respectively) due to high output power and easiness of fabrication and circuit integration. However, high lateral current in the 2DEG channel may lead to failures...

Full description

Bibliographic Details
Main Authors: Ying Wang, Liu-An Li, Chong Li, Jin-Ping Ao, Xiao Wang, Yue Hao
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Wide band gap semiconductors
numerical simulation
terahertz Gunn diode
thermal effect
Online Access:https://ieeexplore.ieee.org/document/8962340/

Internet

https://ieeexplore.ieee.org/document/8962340/

Similar Items