Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

Breakdown voltage (<i>BV</i>), on-state voltage (<i>V</i><sub>on</sub>), static latch-up voltage (<i>V</i><sub>lu</sub>), static latch-up current density (<i>J</i><sub>lu</sub>), and threshold voltage (<i>V<...

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Bibliographic Details
Main Authors: Qing Yao, Yufeng Guo, Bo Zhang, Jing Chen, Jun Zhang, Maolin Zhang, Xiaobo Guo, Jiafei Yao, Weihua Tang, Jianhua Liu
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/13/1/4