Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network
Breakdown voltage (<i>BV</i>), on-state voltage (<i>V</i><sub>on</sub>), static latch-up voltage (<i>V</i><sub>lu</sub>), static latch-up current density (<i>J</i><sub>lu</sub>), and threshold voltage (<i>V<...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-12-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/13/1/4 |