Compact Ga<sub>2</sub>O<sub>3</sub> Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature

Compact Ga<sub>2</sub>O<sub>3</sub> Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature

Amorphous Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) thin films were grown by plasma-enhanced atomic layer deposition using O<sub>2</sub> plasma as reactant and trimethylgallium as a gallium source. The growth rate of the Ga<sub>2</sub>O<sub>3&l...

Full description

Bibliographic Details
Main Authors: Yue Yang, Xiao-Ying Zhang, Chen Wang, Fang-Bin Ren, Run-Feng Zhu, Chia-Hsun Hsu, Wan-Yu Wu, Dong-Sing Wuu, Peng Gao, Yu-Jiao Ruan, Shui-Yang Lien, Wen-Zhang Zhu
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Nanomaterials
Subjects:
Ga<sub>2</sub>O<sub>3</sub> thin film
substrate temperature
atomic layer deposition
Online Access:https://www.mdpi.com/2079-4991/12/9/1510

Internet

https://www.mdpi.com/2079-4991/12/9/1510

Similar Items