A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process

A Novel Terahertz Detector Based on Asymmetrical FET Array in 55-nm Standard CMOS Process

This paper reports a novel, one-dimensional dense array of asymmetrical metal-oxide-semiconductor field-effect-transistor (MOSFET) THz detector, which has been fabricated in GlobalFoundries 55-nm CMOS technology. Compared with other technologies, the Si-based complementary metal-oxide-semiconductor...

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Bibliographic Details
Main Authors: Yaxuan Liu, Xin Zhang, Jingye Sun, Ling Tong, Lingbing Kong, Tao Deng
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Materials
Subjects:
terahertz detector
CMOS
asymmetric MOSFET
grating structure
Online Access:https://www.mdpi.com/1996-1944/15/19/6578

Internet

https://www.mdpi.com/1996-1944/15/19/6578

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