Numerical Study of the Thermal and Flow Fields during the Growth Process of 800 kg and 1600 kg Silicon Feedstock

Numerical Study of the Thermal and Flow Fields during the Growth Process of 800 kg and 1600 kg Silicon Feedstock

Two-dimensional (2D) transient numerical simulations are performed to investigate the evolution of the thermal and flow fields during the growth of multi-crystalline silicon ingots with two different silicon feedstock capacities, 800 kg and 1600 kg. The simulation results show that there are differe...

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Bibliographic Details
Main Authors: Thi Hoai Thu Nguyen, Jyh Chen Chen, Chieh Hu, Chun Hung Chen, Yen Hao Huang, Huang Wei Lin, Andy Yu, Bruce Hsu, Michael Yang, Ray Yang
Format: Article
Language:English
Published: MDPI AG 2017-03-01
Series:Crystals
Subjects:
multi-crystalline silicon
directional solidification
solar cells
Online Access:http://www.mdpi.com/2073-4352/7/3/74

Internet

http://www.mdpi.com/2073-4352/7/3/74

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