Quantized synaptic characteristics in HfO2-nanocrystal based resistive switching memory
We demonstrate the reliable resistive switching performance of nanocrystalline-HfO2 inside amorphous-HfOx in TaN/nc-HfO2/ITO memristor structure. Transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) were utilized to confirm the presence of nc-HfO2 and non-stoichiometric...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-11-01
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| Series: | Journal of Materials Research and Technology |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785422015022 |