Quantized synaptic characteristics in HfO2-nanocrystal based resistive switching memory

Quantized synaptic characteristics in HfO2-nanocrystal based resistive switching memory

We demonstrate the reliable resistive switching performance of nanocrystalline-HfO2 inside amorphous-HfOx in TaN/nc-HfO2/ITO memristor structure. Transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) were utilized to confirm the presence of nc-HfO2 and non-stoichiometric...

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Bibliographic Details
Main Authors: Chandreswar Mahata, Muhammad Ismail, Dae Hwan Kim, Sungjun Kim
Format: Article
Language:English
Published: Elsevier 2022-11-01
Series:Journal of Materials Research and Technology
Subjects:
Resistive switching
Nanocrystalline-HfO2
Quantum conductance
Synaptic plasticity
Online Access:http://www.sciencedirect.com/science/article/pii/S2238785422015022

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http://www.sciencedirect.com/science/article/pii/S2238785422015022

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