A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic <i>R</i><sub>ON</sub> of 600 V GaN Switches at Variable Operating Regimes

A Reconfigurable Setup for the On-Wafer Characterization of the Dynamic <i>R</i><sub>ON</sub> of 600 V GaN Switches at Variable Operating Regimes

Charge-trapping mechanisms observed in high-voltage GaN switches are responsible for the degradation of power converter efficiency due to modulation of the effective dynamic ON-resistance (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"&...

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Bibliographic Details
Main Authors: Alessio Alemanno, Alberto Maria Angelotti, Gian Piero Gibiino, Alberto Santarelli, Enrico Sangiorgi, Corrado Florian
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Electronics
Subjects:
GaN switches
trapping effects
ON-resistance
dynamic ON-resistance
GaN device characterization
Online Access:https://www.mdpi.com/2079-9292/12/4/1063

Internet

https://www.mdpi.com/2079-9292/12/4/1063

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