A chaotic potential of charged dislocations in group III-nitride heterojunctions during localization of a two-dimensional electron gas
This work studies a chaotic potential (CP) in the heterojunctions of III-nitrides, the CP caused by the electrostatic field of charged dislocations, under localization conditions of a two-dimensional electron gas in the near-contact region. Within the framework of the statistical analysis of a Poiss...
| Autores principales: | , |
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| Formato: | Artículo |
| Lenguaje: | English |
| Publicado: |
Peter the Great St.Petersburg Polytechnic University
2024-03-01
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| Colección: | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| Materias: | |
| Acceso en línea: | https://physmath.spbstu.ru/article/2024.71.02/ |