A chaotic potential of charged dislocations in group III-nitride heterojunctions during localization of a two-dimensional electron gas
This work studies a chaotic potential (CP) in the heterojunctions of III-nitrides, the CP caused by the electrostatic field of charged dislocations, under localization conditions of a two-dimensional electron gas in the near-contact region. Within the framework of the statistical analysis of a Poiss...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Peter the Great St.Petersburg Polytechnic University
2024-03-01
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| Series: | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| Subjects: | |
| Online Access: | https://physmath.spbstu.ru/article/2024.71.02/ |
| _version_ | 1827288994060173312 |
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| author | Filimonov Alexey Bondarenko Vyacheslav |
| author_facet | Filimonov Alexey Bondarenko Vyacheslav |
| author_sort | Filimonov Alexey |
| collection | DOAJ |
| description | This work studies a chaotic potential (CP) in the heterojunctions of III-nitrides, the CP caused by the electrostatic field of charged dislocations, under localization conditions of a two-dimensional electron gas in the near-contact region. Within the framework of the statistical analysis of a Poisson ensemble of linear defects, the amplitude and scale of the CP in the contact plane have been determined. The CP parameter dependence on the density of surface states and the concentration of dislocations at the mobility threshold of the two-dimensional electron gas was shown. The CP amplitude was established to exceed 100 meV in a wide range of changes in the system parameters, in the presence of electronic charge localization effects in the heterojunctions. |
| first_indexed | 2024-04-24T11:42:10Z |
| format | Article |
| id | doaj.art-f515e24ac9c5463f8c5e9b543d27e739 |
| institution | Directory Open Access Journal |
| issn | 2405-7223 |
| language | English |
| last_indexed | 2024-04-24T11:42:10Z |
| publishDate | 2024-03-01 |
| publisher | Peter the Great St.Petersburg Polytechnic University |
| record_format | Article |
| series | St. Petersburg Polytechnical University Journal: Physics and Mathematics |
| spelling | doaj.art-f515e24ac9c5463f8c5e9b543d27e7392024-04-09T20:08:55ZengPeter the Great St.Petersburg Polytechnic UniversitySt. Petersburg Polytechnical University Journal: Physics and Mathematics2405-72232024-03-0117110.18721/JPM.1710220714726A chaotic potential of charged dislocations in group III-nitride heterojunctions during localization of a two-dimensional electron gasFilimonov Alexey0https://orcid.org/0000-0002-2793-5717Bondarenko Vyacheslav1https://orcid.org/0000-0002-9357-3902Peter the Great St. Petersburg Polytechnic UniversityPeter the Great St. Petersburg Polytechnic UniversityThis work studies a chaotic potential (CP) in the heterojunctions of III-nitrides, the CP caused by the electrostatic field of charged dislocations, under localization conditions of a two-dimensional electron gas in the near-contact region. Within the framework of the statistical analysis of a Poisson ensemble of linear defects, the amplitude and scale of the CP in the contact plane have been determined. The CP parameter dependence on the density of surface states and the concentration of dislocations at the mobility threshold of the two-dimensional electron gas was shown. The CP amplitude was established to exceed 100 meV in a wide range of changes in the system parameters, in the presence of electronic charge localization effects in the heterojunctions.https://physmath.spbstu.ru/article/2024.71.02/chaotic potentialiii-nitride heterojunctiontwo-dimensional electron gasnatural size effect |
| spellingShingle | Filimonov Alexey Bondarenko Vyacheslav A chaotic potential of charged dislocations in group III-nitride heterojunctions during localization of a two-dimensional electron gas St. Petersburg Polytechnical University Journal: Physics and Mathematics chaotic potential iii-nitride heterojunction two-dimensional electron gas natural size effect |
| title | A chaotic potential of charged dislocations in group III-nitride heterojunctions during localization of a two-dimensional electron gas |
| title_full | A chaotic potential of charged dislocations in group III-nitride heterojunctions during localization of a two-dimensional electron gas |
| title_fullStr | A chaotic potential of charged dislocations in group III-nitride heterojunctions during localization of a two-dimensional electron gas |
| title_full_unstemmed | A chaotic potential of charged dislocations in group III-nitride heterojunctions during localization of a two-dimensional electron gas |
| title_short | A chaotic potential of charged dislocations in group III-nitride heterojunctions during localization of a two-dimensional electron gas |
| title_sort | chaotic potential of charged dislocations in group iii nitride heterojunctions during localization of a two dimensional electron gas |
| topic | chaotic potential iii-nitride heterojunction two-dimensional electron gas natural size effect |
| url | https://physmath.spbstu.ru/article/2024.71.02/ |
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