Validating S‐parameter measurements of RF integrated circuits at milli‐Kelvin temperatures
Abstract Techniques to precisely characterise RF components at milli‐Kelvin temperatures support the development of quantum computing systems utilising these components. In this work, an S‐parameter measurement setup to characterise RF integrated circuits at milli‐Kelvin temperatures has been propos...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-08-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12545 |
| _version_ | 1828751699805732864 |
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| author | M. Stanley R. Parker‐Jervis S. deGraaf T. Lindström J. E. Cunningham N. M. Ridler |
| author_facet | M. Stanley R. Parker‐Jervis S. deGraaf T. Lindström J. E. Cunningham N. M. Ridler |
| author_sort | M. Stanley |
| collection | DOAJ |
| description | Abstract Techniques to precisely characterise RF components at milli‐Kelvin temperatures support the development of quantum computing systems utilising these components. In this work, an S‐parameter measurement setup to characterise RF integrated circuits at milli‐Kelvin temperatures has been proposed and for the first time, the S‐parameter measurements at milli‐Kelvin temperatures have been validated using two independent calibration techniques, thereby providing more confidence in measurements. The techniques are demonstrated experimentally by comparing and validating calibrated S‐parameter measurements of a cryogenic attenuator integrated circuits at milli‐Kelvin temperatures. |
| first_indexed | 2024-12-10T20:57:23Z |
| format | Article |
| id | doaj.art-f519c0ef53ae4659a162dd5d589a677e |
| institution | Directory Open Access Journal |
| issn | 0013-5194 1350-911X |
| language | English |
| last_indexed | 2024-12-10T20:57:23Z |
| publishDate | 2022-08-01 |
| publisher | Wiley |
| record_format | Article |
| series | Electronics Letters |
| spelling | doaj.art-f519c0ef53ae4659a162dd5d589a677e2022-12-22T01:33:55ZengWileyElectronics Letters0013-51941350-911X2022-08-01581661461610.1049/ell2.12545Validating S‐parameter measurements of RF integrated circuits at milli‐Kelvin temperaturesM. Stanley0R. Parker‐Jervis1S. deGraaf2T. Lindström3J. E. Cunningham4N. M. Ridler5Electromagnetic & Electrochemical Technologies Department National Physical Laboratory Teddington UKSchool of Electronic and Electrical Engineering University of Leeds Leeds UKQuantum Technologies Department National Physical Laboratory Teddington UKQuantum Technologies Department National Physical Laboratory Teddington UKSchool of Electronic and Electrical Engineering University of Leeds Leeds UKElectromagnetic & Electrochemical Technologies Department National Physical Laboratory Teddington UKAbstract Techniques to precisely characterise RF components at milli‐Kelvin temperatures support the development of quantum computing systems utilising these components. In this work, an S‐parameter measurement setup to characterise RF integrated circuits at milli‐Kelvin temperatures has been proposed and for the first time, the S‐parameter measurements at milli‐Kelvin temperatures have been validated using two independent calibration techniques, thereby providing more confidence in measurements. The techniques are demonstrated experimentally by comparing and validating calibrated S‐parameter measurements of a cryogenic attenuator integrated circuits at milli‐Kelvin temperatures.https://doi.org/10.1049/ell2.12545 |
| spellingShingle | M. Stanley R. Parker‐Jervis S. deGraaf T. Lindström J. E. Cunningham N. M. Ridler Validating S‐parameter measurements of RF integrated circuits at milli‐Kelvin temperatures Electronics Letters |
| title | Validating S‐parameter measurements of RF integrated circuits at milli‐Kelvin temperatures |
| title_full | Validating S‐parameter measurements of RF integrated circuits at milli‐Kelvin temperatures |
| title_fullStr | Validating S‐parameter measurements of RF integrated circuits at milli‐Kelvin temperatures |
| title_full_unstemmed | Validating S‐parameter measurements of RF integrated circuits at milli‐Kelvin temperatures |
| title_short | Validating S‐parameter measurements of RF integrated circuits at milli‐Kelvin temperatures |
| title_sort | validating s parameter measurements of rf integrated circuits at milli kelvin temperatures |
| url | https://doi.org/10.1049/ell2.12545 |
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