Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

Abstract Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures. Critical for carrier and exciton transport is the material quality and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in...

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Bibliographic Details
Main Authors: Dorian Beret, Ioannis Paradisanos, Hassan Lamsaadi, Ziyang Gan, Emad Najafidehaghani, Antony George, Tibor Lehnert, Johannes Biskupek, Ute Kaiser, Shivangi Shree, Ana Estrada-Real, Delphine Lagarde, Xavier Marie, Pierre Renucci, Kenji Watanabe, Takashi Taniguchi, Sébastien Weber, Vincent Paillard, Laurent Lombez, Jean-Marie Poumirol, Andrey Turchanin, Bernhard Urbaszek
Format: Article
Language:English
Published: Nature Portfolio 2022-11-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-022-00354-0