Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors
In this study, we examine the electrical characteristics of triple-gate feedback field-effect transistors (TG FBFETs) over a temperature range of −200 °C to 280 °C. With increasing temperature from 25 °C to 280 °C, the thermally generated charge carriers increase in the channel regions such that a p...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-03-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/14/6/493 |