Limits of carrier mobility in Sb-doped SnO2 conducting films deposited by reactive sputtering
Electron transport in Sb-doped SnO2 (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized fo...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2015-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4916586 |
| _version_ | 1828161783155654656 |
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| author | B. Bissig T. Jäger L. Ding A. N. Tiwari Y. E. Romanyuk |
| author_facet | B. Bissig T. Jäger L. Ding A. N. Tiwari Y. E. Romanyuk |
| author_sort | B. Bissig |
| collection | DOAJ |
| description | Electron transport in Sb-doped SnO2 (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm2 V−1 s−1 to 6 cm2 V−1 s−1 when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10−3 Ω cm corresponding to the mobility of 12 cm2 V−1 s−1 which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO2 films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size. |
| first_indexed | 2024-04-12T00:44:28Z |
| format | Article |
| id | doaj.art-f54ec2a7b5124cf0b08a6a88ee98383b |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-12T00:44:28Z |
| publishDate | 2015-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-f54ec2a7b5124cf0b08a6a88ee98383b2022-12-22T03:54:55ZengAIP Publishing LLCAPL Materials2166-532X2015-06-0136062802062802-710.1063/1.4916586006592APMLimits of carrier mobility in Sb-doped SnO2 conducting films deposited by reactive sputteringB. Bissig0T. Jäger1L. Ding2A. N. Tiwari3Y. E. Romanyuk4Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, SwitzerlandLaboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, SwitzerlandPhotovoltaics and Thin Film Electronics Laboratory, Ecole Polytechnique Fédérale Lausanne (EPFL), Institute of Microengineering (IMT), Rue de la Maladière 71b, 2002 Neuchâtel, SwitzerlandLaboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, SwitzerlandLaboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, SwitzerlandElectron transport in Sb-doped SnO2 (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm2 V−1 s−1 to 6 cm2 V−1 s−1 when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10−3 Ω cm corresponding to the mobility of 12 cm2 V−1 s−1 which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO2 films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size.http://dx.doi.org/10.1063/1.4916586 |
| spellingShingle | B. Bissig T. Jäger L. Ding A. N. Tiwari Y. E. Romanyuk Limits of carrier mobility in Sb-doped SnO2 conducting films deposited by reactive sputtering APL Materials |
| title | Limits of carrier mobility in Sb-doped SnO2 conducting films deposited by reactive sputtering |
| title_full | Limits of carrier mobility in Sb-doped SnO2 conducting films deposited by reactive sputtering |
| title_fullStr | Limits of carrier mobility in Sb-doped SnO2 conducting films deposited by reactive sputtering |
| title_full_unstemmed | Limits of carrier mobility in Sb-doped SnO2 conducting films deposited by reactive sputtering |
| title_short | Limits of carrier mobility in Sb-doped SnO2 conducting films deposited by reactive sputtering |
| title_sort | limits of carrier mobility in sb doped sno2 conducting films deposited by reactive sputtering |
| url | http://dx.doi.org/10.1063/1.4916586 |
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