Limits of carrier mobility in Sb-doped SnO2 conducting films deposited by reactive sputtering

Limits of carrier mobility in Sb-doped SnO2 conducting films deposited by reactive sputtering

Electron transport in Sb-doped SnO2 (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized fo...

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Bibliographic Details
Main Authors: B. Bissig, T. Jäger, L. Ding, A. N. Tiwari, Y. E. Romanyuk
Format: Article
Language:English
Published: AIP Publishing LLC 2015-06-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4916586

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