Molecular Dynamics Simulation of Silicon Dioxide Etching by Hydrogen Fluoride Using the Reactive Force Field

Molecular Dynamics Simulation of Silicon Dioxide Etching by Hydrogen Fluoride Using the Reactive Force Field

Bibliographic Details
Main Authors: Dong Hyun Kim, Seung Jae Kwak, Jae Hun Jeong, Suyoung Yoo, Sang Ki Nam, YongJoo Kim, Won Bo Lee
Format: Article
Language:English
Published: American Chemical Society 2021-06-01
Series:ACS Omega
Online Access:https://doi.org/10.1021/acsomega.1c01824

Internet

https://doi.org/10.1021/acsomega.1c01824

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