Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane

Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane

Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging from 650 to 850 °C. X-ray photoelectron spectro...

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Bibliographic Details
Main Authors: Alain E. Kaloyeros, Jonathan Goff, Barry Arkles
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Electronic Materials
Subjects:
silicon carbide
SiC
chemical vapor deposition
CVD
thin film
organosilicon
Online Access:https://www.mdpi.com/2673-3978/3/1/3

Internet

https://www.mdpi.com/2673-3978/3/1/3

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