Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain

Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain

In this work, relaxed GeSn p-channel tunneling field-effect transistors (pTFETs) with various Sn compositions are fabricated on Si. Enhancement of on-state current ION with the increase of Sn composition is observed in transistors, due to the reduction of direct bandgap EG. Ge0.93Sn0.07 and Ge0.95Sn...

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Bibliographic Details
Main Authors: Genquan Han, Yibo Wang, Yan Liu, Hongjuan Wang, Mingshan Liu, Chunfu Zhang, Jincheng Zhang, Buwen Cheng, Yue Hao
Format: Article
Language:English
Published: AIP Publishing LLC 2015-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4921572

Internet

http://dx.doi.org/10.1063/1.4921572

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