Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain
In this work, relaxed GeSn p-channel tunneling field-effect transistors (pTFETs) with various Sn compositions are fabricated on Si. Enhancement of on-state current ION with the increase of Sn composition is observed in transistors, due to the reduction of direct bandgap EG. Ge0.93Sn0.07 and Ge0.95Sn...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-05-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4921572 |
| _version_ | 1828866278668894208 |
|---|---|
| author | Genquan Han Yibo Wang Yan Liu Hongjuan Wang Mingshan Liu Chunfu Zhang Jincheng Zhang Buwen Cheng Yue Hao |
| author_facet | Genquan Han Yibo Wang Yan Liu Hongjuan Wang Mingshan Liu Chunfu Zhang Jincheng Zhang Buwen Cheng Yue Hao |
| author_sort | Genquan Han |
| collection | DOAJ |
| description | In this work, relaxed GeSn p-channel tunneling field-effect transistors (pTFETs) with various Sn compositions are fabricated on Si. Enhancement of on-state current ION with the increase of Sn composition is observed in transistors, due to the reduction of direct bandgap EG. Ge0.93Sn0.07 and Ge0.95Sn0.05 pTFETs achieve 110% and 75% enhancement in ION, respectively, compared to Ge0.97Sn0.03 devices, at VGS - VTH = VDS = - 1.0 V. For the first time, ION enhancement in GeSn pTFET utilizing uniaxial tensile strain is reported. By applying 0.14% uniaxial tensile strain along [110] channel direction, Ge0.95Sn0.05 pTFETs achieve 12% ION improvement, over unstrained control devices at VGS - VTH = VDS = - 1.0 V. Theoretical study demonstrates that uniaxial tensile strain leads to the reduction of direct EG and affects the reduced tunneling mass, which bring the GBTBT rising, benefiting the tunneling current enhancement in GeSn TFETs. |
| first_indexed | 2024-12-13T04:46:32Z |
| format | Article |
| id | doaj.art-f594d03091fb43e89c23c71d9fe14238 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-13T04:46:32Z |
| publishDate | 2015-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-f594d03091fb43e89c23c71d9fe142382022-12-21T23:59:08ZengAIP Publishing LLCAIP Advances2158-32262015-05-0155057145057145-1210.1063/1.4921572045505ADVRelaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strainGenquan Han0Yibo Wang1Yan Liu2Hongjuan Wang3Mingshan Liu4Chunfu Zhang5Jincheng Zhang6Buwen Cheng7Yue Hao8Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an, 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an, 710071, ChinaKey Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing, 400044, ChinaKey Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing, 400044, ChinaKey Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, Chongqing University, Chongqing, 400044, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an, 710071, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an, 710071, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an, 710071, ChinaIn this work, relaxed GeSn p-channel tunneling field-effect transistors (pTFETs) with various Sn compositions are fabricated on Si. Enhancement of on-state current ION with the increase of Sn composition is observed in transistors, due to the reduction of direct bandgap EG. Ge0.93Sn0.07 and Ge0.95Sn0.05 pTFETs achieve 110% and 75% enhancement in ION, respectively, compared to Ge0.97Sn0.03 devices, at VGS - VTH = VDS = - 1.0 V. For the first time, ION enhancement in GeSn pTFET utilizing uniaxial tensile strain is reported. By applying 0.14% uniaxial tensile strain along [110] channel direction, Ge0.95Sn0.05 pTFETs achieve 12% ION improvement, over unstrained control devices at VGS - VTH = VDS = - 1.0 V. Theoretical study demonstrates that uniaxial tensile strain leads to the reduction of direct EG and affects the reduced tunneling mass, which bring the GBTBT rising, benefiting the tunneling current enhancement in GeSn TFETs.http://dx.doi.org/10.1063/1.4921572 |
| spellingShingle | Genquan Han Yibo Wang Yan Liu Hongjuan Wang Mingshan Liu Chunfu Zhang Jincheng Zhang Buwen Cheng Yue Hao Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain AIP Advances |
| title | Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain |
| title_full | Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain |
| title_fullStr | Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain |
| title_full_unstemmed | Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain |
| title_short | Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain |
| title_sort | relaxed germanium tin p channel tunneling field effect transistors fabricated on si impacts of sn composition and uniaxial tensile strain |
| url | http://dx.doi.org/10.1063/1.4921572 |
| work_keys_str_mv | AT genquanhan relaxedgermaniumtinpchanneltunnelingfieldeffecttransistorsfabricatedonsiimpactsofsncompositionanduniaxialtensilestrain AT yibowang relaxedgermaniumtinpchanneltunnelingfieldeffecttransistorsfabricatedonsiimpactsofsncompositionanduniaxialtensilestrain AT yanliu relaxedgermaniumtinpchanneltunnelingfieldeffecttransistorsfabricatedonsiimpactsofsncompositionanduniaxialtensilestrain AT hongjuanwang relaxedgermaniumtinpchanneltunnelingfieldeffecttransistorsfabricatedonsiimpactsofsncompositionanduniaxialtensilestrain AT mingshanliu relaxedgermaniumtinpchanneltunnelingfieldeffecttransistorsfabricatedonsiimpactsofsncompositionanduniaxialtensilestrain AT chunfuzhang relaxedgermaniumtinpchanneltunnelingfieldeffecttransistorsfabricatedonsiimpactsofsncompositionanduniaxialtensilestrain AT jinchengzhang relaxedgermaniumtinpchanneltunnelingfieldeffecttransistorsfabricatedonsiimpactsofsncompositionanduniaxialtensilestrain AT buwencheng relaxedgermaniumtinpchanneltunnelingfieldeffecttransistorsfabricatedonsiimpactsofsncompositionanduniaxialtensilestrain AT yuehao relaxedgermaniumtinpchanneltunnelingfieldeffecttransistorsfabricatedonsiimpactsofsncompositionanduniaxialtensilestrain |