Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain
In this work, relaxed GeSn p-channel tunneling field-effect transistors (pTFETs) with various Sn compositions are fabricated on Si. Enhancement of on-state current ION with the increase of Sn composition is observed in transistors, due to the reduction of direct bandgap EG. Ge0.93Sn0.07 and Ge0.95Sn...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4921572 |