Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K

Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K

This paper introduces a two-dimensional (2D) numerical simulation of the amplification of space charge waves using negative differential conductance in a typical MOS silicon–germanium (SiGe)-based field-effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technology at 4.2 K....

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Bibliographic Details
Main Authors: Abel Garcia-Barrientos, Natalia Nikolova, Lado Filipovic, Edmundo A. Gutierrez-D., Victoria Serrano, Sharon Macias-Velasquez, Sarai Zarate-Galvez
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Crystals
Subjects:
space charge waves
SiGe
negative differential conductance
Online Access:https://www.mdpi.com/2073-4352/13/9/1398

Internet

https://www.mdpi.com/2073-4352/13/9/1398

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