Characteristic modeling of a diode detector based on a semiconductor(BiSb) /superconductor (NbN) heterojunction with surface states
Diode detectors (DDs) are widely used in electronic information and communication systems. In this study, a numerical modeling of the electric potential distribution and current passing in contacts of niobium nitride (NbN) with a bismuth-antimony (Bi-Sb) semiconductor alloy was performed. Earlier, w...
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| Format: | Article |
| Language: | English |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2012-01-01
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| Series: | Moldavian Journal of the Physical Sciences |
| Online Access: | https://mjps.nanotech.md/archive/2012/article/18994 |