Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate

Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate

Abstract A pulsed laser annealing method is utilized to directly synthesize nickel silicide (NiSi) as a contact material to improve the contact of electric devices. Three laser wavelengths, 355 nm (ultraviolet laser), 532 nm (green laser), and 1064 nm (infrared laser), are used for the NiSi synthesi...

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Bibliographic Details
Main Authors: Yu‐Chieh Hsu, Yan‐Yu Chen, Jia‐Min Shieh, Wen‐Hsien Huang, Chang‐Hong Shen, Yu‐Lun Chueh
Format: Article
Language:English
Published: Wiley-VCH 2023-12-01
Series:Advanced Electronic Materials
Subjects:
6T‐SRAM
CMOS inverter
flexible device
nickel silicide
pulsed‐laser annealing
Online Access:https://doi.org/10.1002/aelm.202300353

Internet

https://doi.org/10.1002/aelm.202300353

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