Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate
Abstract A pulsed laser annealing method is utilized to directly synthesize nickel silicide (NiSi) as a contact material to improve the contact of electric devices. Three laser wavelengths, 355 nm (ultraviolet laser), 532 nm (green laser), and 1064 nm (infrared laser), are used for the NiSi synthesi...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-12-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202300353 |
| _version_ | 1797352597312503808 |
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| author | Yu‐Chieh Hsu Yan‐Yu Chen Jia‐Min Shieh Wen‐Hsien Huang Chang‐Hong Shen Yu‐Lun Chueh |
| author_facet | Yu‐Chieh Hsu Yan‐Yu Chen Jia‐Min Shieh Wen‐Hsien Huang Chang‐Hong Shen Yu‐Lun Chueh |
| author_sort | Yu‐Chieh Hsu |
| collection | DOAJ |
| description | Abstract A pulsed laser annealing method is utilized to directly synthesize nickel silicide (NiSi) as a contact material to improve the contact of electric devices. Three laser wavelengths, 355 nm (ultraviolet laser), 532 nm (green laser), and 1064 nm (infrared laser), are used for the NiSi synthesis during the pulsed laser annealing process. A NiSi phase with low sheet resistance is formed by an ultraviolet laser annealing (ULA) process without damaging the polyimide (PI) substrate. With the integration of the ULA process‐induced NiSi into p‐nnel MOSFET (PMOS) and n‐channel MOSFET (NMOS) devices, the on/off ratio improves significantly, and the field‐effect mobility increases by 30% because of the reduction in contact resistance from 21 to 8.5 kΩ. In addition to the PMOS and NMOS, the gains of the CMOS inverter at different Vdd values are improved by at least 30%. Moreover, the static noise margin of 6T‐SRAM is elevated from 0.82 to 1 V at Vdd = 4 V. The ability of the ULA process to synthesize a high‐quality NiSi layer on a flexible substrate is demonstrated. The integration of NiSi into electrical devices offers a new pathway for improving the electrical behavior of flexible devices. |
| first_indexed | 2024-03-08T13:19:11Z |
| format | Article |
| id | doaj.art-f64d202f63564b9997473fb527c58ce5 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-08T13:19:11Z |
| publishDate | 2023-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-f64d202f63564b9997473fb527c58ce52024-01-18T04:25:58ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-12-01912n/an/a10.1002/aelm.202300353Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible SubstrateYu‐Chieh Hsu0Yan‐Yu Chen1Jia‐Min Shieh2Wen‐Hsien Huang3Chang‐Hong Shen4Yu‐Lun Chueh5Department of Materials Science and Engineering National Tsing‐Hua University 30013 Hsinchu TaiwanDepartment of Materials Science and Engineering National Tsing‐Hua University 30013 Hsinchu TaiwanNational Applied Research Laboratories Taiwan Semiconductor Research Institute Hsinchu 300091 TaiwanNational Applied Research Laboratories Taiwan Semiconductor Research Institute Hsinchu 300091 TaiwanNational Applied Research Laboratories Taiwan Semiconductor Research Institute Hsinchu 300091 TaiwanDepartment of Materials Science and Engineering National Tsing‐Hua University 30013 Hsinchu TaiwanAbstract A pulsed laser annealing method is utilized to directly synthesize nickel silicide (NiSi) as a contact material to improve the contact of electric devices. Three laser wavelengths, 355 nm (ultraviolet laser), 532 nm (green laser), and 1064 nm (infrared laser), are used for the NiSi synthesis during the pulsed laser annealing process. A NiSi phase with low sheet resistance is formed by an ultraviolet laser annealing (ULA) process without damaging the polyimide (PI) substrate. With the integration of the ULA process‐induced NiSi into p‐nnel MOSFET (PMOS) and n‐channel MOSFET (NMOS) devices, the on/off ratio improves significantly, and the field‐effect mobility increases by 30% because of the reduction in contact resistance from 21 to 8.5 kΩ. In addition to the PMOS and NMOS, the gains of the CMOS inverter at different Vdd values are improved by at least 30%. Moreover, the static noise margin of 6T‐SRAM is elevated from 0.82 to 1 V at Vdd = 4 V. The ability of the ULA process to synthesize a high‐quality NiSi layer on a flexible substrate is demonstrated. The integration of NiSi into electrical devices offers a new pathway for improving the electrical behavior of flexible devices.https://doi.org/10.1002/aelm.2023003536T‐SRAMCMOS inverterflexible devicenickel silicidepulsed‐laser annealing |
| spellingShingle | Yu‐Chieh Hsu Yan‐Yu Chen Jia‐Min Shieh Wen‐Hsien Huang Chang‐Hong Shen Yu‐Lun Chueh Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate Advanced Electronic Materials 6T‐SRAM CMOS inverter flexible device nickel silicide pulsed‐laser annealing |
| title | Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate |
| title_full | Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate |
| title_fullStr | Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate |
| title_full_unstemmed | Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate |
| title_short | Design on Formation of Nickel Silicide by a Low‐Temperature Pulsed Laser Annealing Method to Reduce Contact Resistance for CMOS Inverter and 6T‐SRAM on a Wafer‐Scale Flexible Substrate |
| title_sort | design on formation of nickel silicide by a low temperature pulsed laser annealing method to reduce contact resistance for cmos inverter and 6t sram on a wafer scale flexible substrate |
| topic | 6T‐SRAM CMOS inverter flexible device nickel silicide pulsed‐laser annealing |
| url | https://doi.org/10.1002/aelm.202300353 |
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