Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates

Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of graphene nanori...

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Bibliographic Details
Main Authors: Wan Sik Hwang, Pei Zhao, Kristof Tahy, Luke O. Nyakiti, Virginia D. Wheeler, Rachael L. Myers-Ward, Charles R. Eddy Jr., D. Kurt Gaskill, Joshua A. Robinson, Wilfried Haensch, Huili (Grace) Xing, Alan Seabaugh, Debdeep Jena
Format: Article
Language:English
Published: AIP Publishing LLC 2015-01-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4905155

Internet

http://dx.doi.org/10.1063/1.4905155

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