Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of graphene nanori...
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2015-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4905155 |
| _version_ | 1818351519123111936 |
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| author | Wan Sik Hwang Pei Zhao Kristof Tahy Luke O. Nyakiti Virginia D. Wheeler Rachael L. Myers-Ward Charles R. Eddy Jr. D. Kurt Gaskill Joshua A. Robinson Wilfried Haensch Huili (Grace) Xing Alan Seabaugh Debdeep Jena |
| author_facet | Wan Sik Hwang Pei Zhao Kristof Tahy Luke O. Nyakiti Virginia D. Wheeler Rachael L. Myers-Ward Charles R. Eddy Jr. D. Kurt Gaskill Joshua A. Robinson Wilfried Haensch Huili (Grace) Xing Alan Seabaugh Debdeep Jena |
| author_sort | Wan Sik Hwang |
| collection | DOAJ |
| description | We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of graphene nanoribbons (GNRs), the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors and remain potential candidates for electronic switching devices. |
| first_indexed | 2024-12-13T18:39:01Z |
| format | Article |
| id | doaj.art-f6675ef631ae41bdac76276af5a6c515 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-13T18:39:01Z |
| publishDate | 2015-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-f6675ef631ae41bdac76276af5a6c5152022-12-21T23:35:17ZengAIP Publishing LLCAPL Materials2166-532X2015-01-0131011101011101-910.1063/1.4905155001501APMGraphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substratesWan Sik Hwang0Pei Zhao1Kristof Tahy2Luke O. Nyakiti3Virginia D. Wheeler4Rachael L. Myers-Ward5Charles R. Eddy Jr.6D. Kurt Gaskill7Joshua A. Robinson8Wilfried Haensch9Huili (Grace) Xing10Alan Seabaugh11Debdeep Jena12 Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USAU. S. Naval Research Laboratory, Washington, DC 20375, USAU. S. Naval Research Laboratory, Washington, DC 20375, USAU. S. Naval Research Laboratory, Washington, DC 20375, USAU. S. Naval Research Laboratory, Washington, DC 20375, USAU. S. Naval Research Laboratory, Washington, DC 20375, USAMaterials Science and Engineering & Center of 2D & Layered Materials, Pennsylvania State University, University Park, Pennsylvania 16802, USAIBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USAWe report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of graphene nanoribbons (GNRs), the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors and remain potential candidates for electronic switching devices.http://dx.doi.org/10.1063/1.4905155 |
| spellingShingle | Wan Sik Hwang Pei Zhao Kristof Tahy Luke O. Nyakiti Virginia D. Wheeler Rachael L. Myers-Ward Charles R. Eddy Jr. D. Kurt Gaskill Joshua A. Robinson Wilfried Haensch Huili (Grace) Xing Alan Seabaugh Debdeep Jena Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates APL Materials |
| title | Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates |
| title_full | Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates |
| title_fullStr | Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates |
| title_full_unstemmed | Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates |
| title_short | Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates |
| title_sort | graphene nanoribbon field effect transistors on wafer scale epitaxial graphene on sic substrates |
| url | http://dx.doi.org/10.1063/1.4905155 |
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