Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories

This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (<i>a</i>-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gate (CG) and a sensing gate (SG),...

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Bibliographic Details
Main Authors: Hyeong-Un Jeon, Won-Ju Cho
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Sensors
Subjects:
amorphous oxide semiconductor
ion-sensitive field-effect transistor
resistive coupling effect
embedded resistive switching memories
multi-level state
Online Access:https://www.mdpi.com/1424-8220/21/13/4435

Internet

https://www.mdpi.com/1424-8220/21/13/4435

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