Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories
This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (<i>a</i>-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gate (CG) and a sensing gate (SG),...
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| Format: | Article |
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MDPI AG
2021-06-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/21/13/4435 |
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| author | Hyeong-Un Jeon Won-Ju Cho |
| author_facet | Hyeong-Un Jeon Won-Ju Cho |
| author_sort | Hyeong-Un Jeon |
| collection | DOAJ |
| description | This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (<i>a</i>-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gate (CG) and a sensing gate (SG), each with a resistive switching (RS) memory connected, and a floating gate (FG) that modulates the channel conductance of the <i>a</i>-IGZO TFT. The resistive coupling between the RS memories connected to the CG and SG produces sensitivity properties that considerably exceed the limit of conventional ion-sensitive field-effect transistor (ISFET)-based sensors. The resistances of the embedded RS memories were determined by applying a voltage to the CG–FG and SG–FG structures independently and adjusting the compliance current. Sensors constructed using RS memories with different resistance ratios yielded a pH sensitivity of 50.5 mV/pH (<i>R</i><sub>CG</sub>:<i>R</i><sub>SG</sub> = 1:1), 105.2 mV/pH (<i>R</i><sub>CG</sub>:<i>R</i><sub>SG</sub> = 2:1), and 161.9 mV/pH (<i>R</i><sub>CG</sub>:<i>R</i><sub>SG</sub> = 3:1). Moreover, when the <i>R</i><sub>CG</sub>:<i>R</i><sub>SG</sub> = 3:1, the hysteresis voltage width (<i>V</i><sub>H</sub>) and drift rate were 54.4 mV and 32.9 mV/h, respectively. As the increases in <i>V</i><sub>H</sub> and drift rate are lower than the amplified sensitivity, the sensor performs capably. The proposed device is viable as a versatile sensing device capable of detecting various substances, such as cells, antigens, DNA, and gases. |
| first_indexed | 2024-03-10T09:59:14Z |
| format | Article |
| id | doaj.art-f67d80e7e5444c1785dcee1fe8821083 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-10T09:59:14Z |
| publishDate | 2021-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-f67d80e7e5444c1785dcee1fe88210832023-11-22T02:05:06ZengMDPI AGSensors1424-82202021-06-012113443510.3390/s21134435Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching MemoriesHyeong-Un Jeon0Won-Ju Cho1Department of Electronic Materials Engineering, Kwangwoon University, 20 Gwangun-ro, Nowon-gu, Seoul 01897, KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, 20 Gwangun-ro, Nowon-gu, Seoul 01897, KoreaThis paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (<i>a</i>-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gate (CG) and a sensing gate (SG), each with a resistive switching (RS) memory connected, and a floating gate (FG) that modulates the channel conductance of the <i>a</i>-IGZO TFT. The resistive coupling between the RS memories connected to the CG and SG produces sensitivity properties that considerably exceed the limit of conventional ion-sensitive field-effect transistor (ISFET)-based sensors. The resistances of the embedded RS memories were determined by applying a voltage to the CG–FG and SG–FG structures independently and adjusting the compliance current. Sensors constructed using RS memories with different resistance ratios yielded a pH sensitivity of 50.5 mV/pH (<i>R</i><sub>CG</sub>:<i>R</i><sub>SG</sub> = 1:1), 105.2 mV/pH (<i>R</i><sub>CG</sub>:<i>R</i><sub>SG</sub> = 2:1), and 161.9 mV/pH (<i>R</i><sub>CG</sub>:<i>R</i><sub>SG</sub> = 3:1). Moreover, when the <i>R</i><sub>CG</sub>:<i>R</i><sub>SG</sub> = 3:1, the hysteresis voltage width (<i>V</i><sub>H</sub>) and drift rate were 54.4 mV and 32.9 mV/h, respectively. As the increases in <i>V</i><sub>H</sub> and drift rate are lower than the amplified sensitivity, the sensor performs capably. The proposed device is viable as a versatile sensing device capable of detecting various substances, such as cells, antigens, DNA, and gases.https://www.mdpi.com/1424-8220/21/13/4435amorphous oxide semiconductorion-sensitive field-effect transistorresistive coupling effectembedded resistive switching memoriesmulti-level state |
| spellingShingle | Hyeong-Un Jeon Won-Ju Cho Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories Sensors amorphous oxide semiconductor ion-sensitive field-effect transistor resistive coupling effect embedded resistive switching memories multi-level state |
| title | Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories |
| title_full | Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories |
| title_fullStr | Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories |
| title_full_unstemmed | Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories |
| title_short | Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories |
| title_sort | fully transparent and sensitivity programmable amorphous indium gallium zinc oxide thin film transistor based biosensor platforms with resistive switching memories |
| topic | amorphous oxide semiconductor ion-sensitive field-effect transistor resistive coupling effect embedded resistive switching memories multi-level state |
| url | https://www.mdpi.com/1424-8220/21/13/4435 |
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