A computational analysis on the role of low energy proton-induced single event upset in a 65 nm CMOS SRAM
This investigation is a computational analysis of a kind of radiation effect on electronic devices, known as the single event upset (SEU) with the Geant4 toolkit. Accordingly, the results are compared with the similar experimental work and a simulation study which is performed by CRÈME-MC Monte Carl...
| Main Authors: | , , |
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| Format: | Article |
| Language: | fas |
| Published: |
Nuclear Science and Technology Research Institute
2020-11-01
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| Series: | مجله علوم و فنون هستهای |
| Subjects: | |
| Online Access: | https://jonsat.nstri.ir/article_1141_bd822f1f023ac0a6883a936b167bad25.pdf |