Interface Modulation for the Heterointegration of Diamond on Si

Interface Modulation for the Heterointegration of Diamond on Si

Abstract Along with the increasing integration density and decreased feature size of current semiconductor technology, heterointegration of the Si‐based devices with diamond has acted as a promising strategy to relieve the existing heat dissipation problem. As one of the heterointegration methods, t...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид: Xing Li, Li Wan, Chaonan Lin, Wen‐Tao Huang, Jing Zhou, Jie Zhu, Xun Yang, Xigui Yang, Zhenfeng Zhang, Yandi Zhu, Xiaoyan Ren, Ziliang Jin, Lin Dong, Shaobo Cheng, Shunfang Li, Chongxin Shan
Формат: Өгүүллэг
Хэл сонгох:English
Хэвлэсэн: Wiley 2024-06-01
Цуврал:Advanced Science
Нөхцлүүд:
β‐SiC
electron microscopy
heterointegration
interfacial structure
MPCVD diamond
Онлайн хандалт:https://doi.org/10.1002/advs.202309126

Интернэт

https://doi.org/10.1002/advs.202309126

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