High aspect ratio slanted grating replication process with low residual layer thickness
Slanted subwavelength gra2ngs are used today in various products, especially as TIR couplers in Augmented Reality (AR) waveguides. Nano-Imprint Lithography (NIL) has been successfully used as a produc2on technique for such gra2ngs with periods down to 250nm, slants up to 45 degrees and aspect ra2o u...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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EDP Sciences
2023-01-01
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| Series: | EPJ Web of Conferences |
| Online Access: | https://www.epj-conferences.org/articles/epjconf/pdf/2023/13/epjconf_eosam2023_04030.pdf |
| _version_ | 1797634938010337280 |
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| author | Kress Bernard Pace Maria |
| author_facet | Kress Bernard Pace Maria |
| author_sort | Kress Bernard |
| collection | DOAJ |
| description | Slanted subwavelength gra2ngs are used today in various products, especially as TIR couplers in Augmented Reality (AR) waveguides. Nano-Imprint Lithography (NIL) has been successfully used as a produc2on technique for such gra2ngs with periods down to 250nm, slants up to 45 degrees and aspect ra2o up to 2x. In order to propagate larger Field of View (FOV) in AR headsets, the refrac2ve index of the waveguide substrate needs to be large (1.9 to 2.0). NIL technologies typically produce a Residual Layer Thickness (RLT) of 100nm or more, requiring the index of the gra2ng resin to match the index of the substrate to prevent FOV clipping. This brings up many challenges such as TiO2 nanofiller migra2on during NIL process, scaRering and absorp2on in blue, and hard master / soT stamp combined degrada2ons. These challenges triggered a need for non-NIL techniques to mass produce such nanostructures, also at a lower cost. Avoiding mechanical contact between the master and the gra2ng material is desired, as costly masters would not deteriorate with volume produc2on. First experimental results are presented with aspect ra2o of 10x at 45deg slant and RLT below 3nm. |
| first_indexed | 2024-03-11T12:14:18Z |
| format | Article |
| id | doaj.art-f72f69b7f216445caad2644b78212421 |
| institution | Directory Open Access Journal |
| issn | 2100-014X |
| language | English |
| last_indexed | 2024-03-11T12:14:18Z |
| publishDate | 2023-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | EPJ Web of Conferences |
| spelling | doaj.art-f72f69b7f216445caad2644b782124212023-11-07T10:20:40ZengEDP SciencesEPJ Web of Conferences2100-014X2023-01-012870403010.1051/epjconf/202328704030epjconf_eosam2023_04030High aspect ratio slanted grating replication process with low residual layer thicknessKress Bernard0Pace Maria1GoogleGoogleSlanted subwavelength gra2ngs are used today in various products, especially as TIR couplers in Augmented Reality (AR) waveguides. Nano-Imprint Lithography (NIL) has been successfully used as a produc2on technique for such gra2ngs with periods down to 250nm, slants up to 45 degrees and aspect ra2o up to 2x. In order to propagate larger Field of View (FOV) in AR headsets, the refrac2ve index of the waveguide substrate needs to be large (1.9 to 2.0). NIL technologies typically produce a Residual Layer Thickness (RLT) of 100nm or more, requiring the index of the gra2ng resin to match the index of the substrate to prevent FOV clipping. This brings up many challenges such as TiO2 nanofiller migra2on during NIL process, scaRering and absorp2on in blue, and hard master / soT stamp combined degrada2ons. These challenges triggered a need for non-NIL techniques to mass produce such nanostructures, also at a lower cost. Avoiding mechanical contact between the master and the gra2ng material is desired, as costly masters would not deteriorate with volume produc2on. First experimental results are presented with aspect ra2o of 10x at 45deg slant and RLT below 3nm.https://www.epj-conferences.org/articles/epjconf/pdf/2023/13/epjconf_eosam2023_04030.pdf |
| spellingShingle | Kress Bernard Pace Maria High aspect ratio slanted grating replication process with low residual layer thickness EPJ Web of Conferences |
| title | High aspect ratio slanted grating replication process with low residual layer thickness |
| title_full | High aspect ratio slanted grating replication process with low residual layer thickness |
| title_fullStr | High aspect ratio slanted grating replication process with low residual layer thickness |
| title_full_unstemmed | High aspect ratio slanted grating replication process with low residual layer thickness |
| title_short | High aspect ratio slanted grating replication process with low residual layer thickness |
| title_sort | high aspect ratio slanted grating replication process with low residual layer thickness |
| url | https://www.epj-conferences.org/articles/epjconf/pdf/2023/13/epjconf_eosam2023_04030.pdf |
| work_keys_str_mv | AT kressbernard highaspectratioslantedgratingreplicationprocesswithlowresiduallayerthickness AT pacemaria highaspectratioslantedgratingreplicationprocesswithlowresiduallayerthickness |