Temperature dependence of capacitance–voltage characteristics of germanium telluride thin films
Temperature-dependent capacitance–voltage and conductance–voltage measurements of 200-nm-thick germanium telluride (GeTe) thin films deposited via direct current magnetron sputtering were investigated. Measurements were performed across a temperature range of 27–357 °C, with a sweep of voltage value...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2022-05-01
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| Series: | Journal of Materials Research and Technology |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785422004586 |