Robust large-gap topological insulator phase in transition-metal chalcogenide ZrTe4Se
Based on density functional theory, we investigate the electronic properties of bulk and single-layer ZrTe _4 Se. The band structure of bulk ZrTe _4 Se can produce a semimetal-to-topological insulator (TI) phase transition under uniaxial strain. The maximum global band gap is 0.189 eV at the 7% tens...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/ac2712 |