Robust large-gap topological insulator phase in transition-metal chalcogenide ZrTe4Se

Robust large-gap topological insulator phase in transition-metal chalcogenide ZrTe4Se

Based on density functional theory, we investigate the electronic properties of bulk and single-layer ZrTe _4 Se. The band structure of bulk ZrTe _4 Se can produce a semimetal-to-topological insulator (TI) phase transition under uniaxial strain. The maximum global band gap is 0.189 eV at the 7% tens...

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Bibliographic Details
Main Authors: Xing Wang, Wenhui Wan, Yanfeng Ge, Yong Liu
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:New Journal of Physics
Subjects:
topological insulator
strain
surface state
edge state
Online Access:https://doi.org/10.1088/1367-2630/ac2712

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