Accelerated Testing of High Power Transistors for Long Operation when Solving Problems of Prediction of their Reliability by the Method of Imitation Simulation

Accelerated Testing of High Power Transistors for Long Operation when Solving Problems of Prediction of their Reliability by the Method of Imitation Simulation

When evaluating the individual reliability of semiconductor devices by gradual failures for a given operating time, the value of the electrical parameter of a particular instance for this operating time is predicted using the simulation method. To obtain a prediction of an electrical parameter, it i...

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Bibliographic Details
Main Authors: V. O. Kaziuchyts, E. V. Kalita, S. M. Borovikov, A. I. Berasnevich
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2022-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
bipolar transistors
gradual failure reliability
long operating time
accelerated testing
simulation model
Online Access:https://doklady.bsuir.by/jour/article/view/3387

Internet

https://doklady.bsuir.by/jour/article/view/3387

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